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High-performance H2S gas sensor utilizing MXene/MoS2 heterostructure synthesized via the Langmuir–Blodgett technique and chemical vapor deposition

In this study, we developed an H2S gas sensor based on a MXene/MoS2 heterostructure, using the Langmuir–Blodgett (LB) technique and chemical vapor deposition (CVD). Ti3C2Tx MXene nanosheets were uniformly transferred onto SiO2/Si substrates via the LB technique, achieving near-complete coverage. Sub...

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Bibliographic Details
Published in:RSC advances 2024-11, Vol.14 (51), p.37781-37787
Main Authors: Shin, Jae Hyuk, Su, Hun Jo, Rhyu, Hyejin, Park, Chanwon, Kang, Myung Hyun, Song, Wooseok, Lee, Sun Sook, Lim, Jongsun, Sung Myung
Format: Article
Language:English
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Summary:In this study, we developed an H2S gas sensor based on a MXene/MoS2 heterostructure, using the Langmuir–Blodgett (LB) technique and chemical vapor deposition (CVD). Ti3C2Tx MXene nanosheets were uniformly transferred onto SiO2/Si substrates via the LB technique, achieving near-complete coverage. Subsequently, flower-like MoS2 was grown on the MXene-coated substrate through CVD, with vertical growth observed on the MXene layers. Our hybrid sensors exhibited a significant enhancement in gas response, with the MXene/MoS2 heterostructure showing a response of 0.5 to H2S – approximately five times greater than that of pristine MXene. This improvement is attributed to the formation of a heterojunction, which increases electron mobility and reduces the depletion layer, enabling more efficient gas detection. Furthermore, the sensor demonstrated excellent selectivity for H2S over other gases, including H2, NO2, NH3, NO, and VOCs. The combination of the LB technique and CVD not only enhances gas sensor performance but also offers a promising strategy for synthesizing materials for various electrochemical applications.
ISSN:2046-2069
2046-2069
DOI:10.1039/d4ra07555b