Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

• Published in: Advanced materials (Weinheim) 2024-11, Vol.36 (48), p.e2410655-n/a
• Main Authors: Acharya, Gokul, Neupane, Bimal, Hsu, Chia‐Hsiu, Yang, Xian P., Graf, David, Choi, Eun Sang, Pandey, Krishna, Nabi, Md Rafique Un, Chhetri, Santosh Karki, Basnet, Rabindra, Rahman, Sumaya, Wang, Jian, Hu, Zhengxin, Da, Bo, Churchill, Hugh O. H, Chang, Guoqing, Hasan, M. Zahid, Wang, Yuanxi, Hu, Jin
• Format: Article
• Language: English
• Subjects: Antiferromagnetism; Electrical conduction; Electron spin; Electron transport; Electrons; exchange splitting; Gadolinium; insulator‐to‐metal transition; isotropic magneto‐transport; Magnetic fields; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetoresistance; Magnetoresistivity; Modulation; Spin-orbit interactions; Transport phenomena; Transport properties
• ISSN: 0935-9648; 1521-4095; 1521-4095
• DOI: 10.1002/adma.202410655

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field‐driven insulator‐to‐metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd3+‐based half‐filling f‐electron system and the strong on‐site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities. Utilizing strong exchange splitting in isotropic magnetic material, magnetic field‐induced insulator‐to‐metal transition accompanied by gigantic, isotropic magnetoresistance is realized in a pristine material for the first time in a layered compound, holding great promise to revolutionize device technologies.