SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black

SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half...

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Bibliographic Details
Published in:Nanoscale research letters 2009-02, Vol.4 (2), p.153-156, Article 153
Main Authors: Wang, Feng-Lei, Zhang, Li-Ying, Zhang, Ya-Fei
Format: Article
Language:English
Subjects:
Arc discharges
Black carbon
Carbon
Carbon black
Chemistry and Materials Science
Electric arcs
Heating
High frequency induction furnaces
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Nanowires
Nucleation
Silicon carbide
Synthesis
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Summary:SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO 2 nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1007/s11671-008-9216-3