Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination and line defect, were analyzed in the current study. A series of control experiments demonstrated that the determinant factor for the l...

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Bibliographic Details
Published in:Scientific reports 2012-03, Vol.2 (1), p.337-337, Article 337
Main Authors: Song, H. S., Li, S. L., Miyazaki, H., Sato, S., Hayashi, K., Yamada, A., Yokoyama, N., Tsukagoshi, K.
Format: Article
Language:English
Subjects:
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Boundaries
Chemical vapor deposition
Conduction
Contamination
Grain boundaries
Humanities and Social Sciences
Mobility
multidisciplinary
Point defects
Science
Temperature effects
Vapors
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Summary:The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination and line defect, were analyzed in the current study. A series of control experiments demonstrated that the determinant factor for the low transport mobility of CVD-G did not arise from point defects or surface contaminations, but stemmed from line defects induced by grain boundaries. Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. The effect of grain boundary on transport mobility was qualitatively explained using a potential barrier model. Furthermore, the conduction mechanism of CVD-G was also investigated using the temperature dependence measurements. This study can help understand the intrinsic transport features of CVD-G.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep00337