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Effect of non-lattice oxygen on ZrO2-based resistive switching memory

ZrO 2 -based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO 2 /Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO 2 film is onl...

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Published in:Nanoscale research letters 2012-03, Vol.7 (1), p.187-187, Article 187
Main Authors: Lin, Chun-Chieh, Chang, Yi-Peng, Lin, Huei-Bo, Lin, Chu-Hsuan
Format: Article
Language:English
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Summary:ZrO 2 -based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO 2 /Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO 2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO 2 film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO 2 film. In addition, the Al/ZrO 2 /Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-7-187