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Effect of non-lattice oxygen on ZrO2-based resistive switching memory
ZrO 2 -based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO 2 /Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO 2 film is onl...
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Published in: | Nanoscale research letters 2012-03, Vol.7 (1), p.187-187, Article 187 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ZrO
2
-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO
2
/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO
2
film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO
2
film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO
2
film. In addition, the Al/ZrO
2
/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature. |
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ISSN: | 1556-276X 1931-7573 1556-276X |
DOI: | 10.1186/1556-276X-7-187 |