Observation of room-temperature negative differential resistance in Gd-doped Si nanowires on Si(110) surface

The massively parallel arrays of highly periodic Gd-doped Si nanowires (SiNWs) self-organized on Si(110)-16 × 2 surface were investigated by scanning tunneling microscopy and spectroscopy. These periodic Gd-doped SiNWs are atomically precise and show equal size, periodic positions, and high-integrat...

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Bibliographic Details
Published in:Applied physics letters 2012-07, Vol.101 (5), p.53113-53113
Main Authors: Hong, Ie-Hong, Chen, Tsung-Ming, Tsai, Yung-Feng
Format: Article
Language:English
Subjects:
Arrays
Density
Nanocomposites
Nanomaterials
Nanoscale Science and Technology
Nanostructure
Nanowires
Scanning tunneling microscopy
Silicon
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Summary:The massively parallel arrays of highly periodic Gd-doped Si nanowires (SiNWs) self-organized on Si(110)-16 × 2 surface were investigated by scanning tunneling microscopy and spectroscopy. These periodic Gd-doped SiNWs are atomically precise and show equal size, periodic positions, and high-integration densities. Surprisingly, the scanning tunneling spectroscopy results show that each metallic-like, Gd-doped SiNW exhibits room-temperature negative differential resistance (RT-NDR) behavior, which can be reproducible with various Gd dopings and is independent of the tips. Such massively parallel arrays of highly ordered and atomically identical Gd-doped SiNWs with one-dimensional laterally confined RT-NDR can be exploited in Si-based RT-NDR nanodevices.
ISSN:0003-6951
1077-3118
0003-6951
DOI:10.1063/1.4739947