Spin injection in n-type resonant tunneling diodes

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X − )...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2012-10, Vol.7 (1), p.592-592, Article 592
Main Authors: Orsi Gordo, Vanessa, Herval, Leonilson KS, Galeti, Helder VA, Gobato, Yara Galvão, Brasil, Maria JSP, Marques, Gilmar E, Henini, Mohamed, Airey, Robert J
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
International Conference on Superlattices
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanodevices (ICSNN 2012)
Nanoscale Science and Technology
Nanostructures
Nanotechnology
Nanotechnology and Microengineering
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X − ). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-7-592