CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth...

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Bibliographic Details
Published in:Scientific reports 2013-02, Vol.3 (1), p.1238-1238, Article 1238
Main Authors: Wang, Min, Fu, Lei, Gan, Lin, Zhang, Chaohua, Rümmeli, Mark, Bachmatiuk, Alicja, Huang, Kai, Fang, Ying, Liu, Zhongfan
Format: Article
Language:English
Subjects:
639/301/119/995
639/301/357/918/1055
639/638/298/917
639/925/927/1007
Etching
Graphite
Humanities and Social Sciences
Lithography
Mobility
multidisciplinary
Neck
Raman spectroscopy
Science
Spectroscopy
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Summary:Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep01238