Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting dio...

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Bibliographic Details
Published in:Scientific reports 2013-04, Vol.3 (1), p.1637-1637, Article 1637
Main Authors: Fuchs, F., Soltamov, V. A., Väth, S., Baranov, P. G., Mokhov, E. N., Astakhov, G. V., Dyakonov, V.
Format: Article
Language:English
Subjects:
639/301/119/1000
639/624/1020/1089
639/766/400/482
639/925/927/1021
Defects
Electronics industry
Fabrication
Humanities and Social Sciences
Information processing
Irradiation
Light emitting diodes
multidisciplinary
Photons
Science
Silicon
Silicon carbide
Temperature effects
Temperature requirements
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Summary:Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep01637