Solar-Blind Photodetectors for Harsh Electronics

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radia...

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Bibliographic Details
Published in:Scientific reports 2013-09, Vol.3 (1), p.2628-2628, Article 2628
Main Authors: Tsai, Dung-Sheng, Lien, Wei-Cheng, Lien, Der-Hsien, Chen, Kuan-Ming, Tsai, Meng-Lin, Senesky, Debbie G., Yu, Yueh-Chung, Pisano, Albert P., He, Jr-Hau
Format: Article
Language:English
Subjects:
639/166/984
639/301/1005/1009
639/624/400/1021
639/766/25
Electronics
Harsh environments
Humanities and Social Sciences
Light
multidisciplinary
Photoresponse
Science
Sensors
Temperature effects
Temperature tolerance
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Summary:We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10 13  cm −2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep02628