Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure

A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-s...

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Bibliographic Details
Published in:Journal of applied physics 2014-05, Vol.115 (17), p.17B742-17B742
Main Authors: Suzuki, D, Natsui, M, Mochizuki, A, Miura, S, Honjo, H, Kinoshita, K, Fukami, S, Sato, H, Ikeda, S, Endoh, T, Ohno, H, Hanyu, T
Format: Article
Language:English
Subjects:
CMOS
Magnetic Recording
Transistors
Tunnel junctions
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Summary:A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.
ISSN:0021-8979
1089-7550
0021-8979
DOI:10.1063/1.4868332