Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we...

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Bibliographic Details
Published in:Scientific reports 2014-05, Vol.4 (1), p.4906-4906, Article 4906
Main Authors: Li, Yi, Zhong, Yingpeng, Zhang, Jinjian, Xu, Lei, Wang, Qing, Sun, Huajun, Tong, Hao, Cheng, Xiaoming, Miao, Xiangshui
Format: Article
Language:English
Subjects:
142/126
147/135
631/378/2591
639/925/927/1007
Biomimetics
Construction
Electric Conductivity
Electrical Synapses
Electronics - instrumentation
Firing rate
Hebbian plasticity
Humanities and Social Sciences
Information processing
Information storage
Learning
Memory
multidisciplinary
Neuronal Plasticity
Plasticity
Science
Synapses
Synaptic plasticity
Synaptic strength
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Summary:Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development of highly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep04906