Thermally controlled widening of droplet etched nanoholes

We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of local droplet etching using Ga droplets with long-time thermal annealing. The cone-like shape of inverted nanoholes formed by droplet etching is transformed during long-time annealing into widened ho...

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Bibliographic Details
Published in:Nanoscale research letters 2014-06, Vol.9 (1), p.285-285, Article 285
Main Authors: Heyn, Christian, Schnüll, Sandra, Jesson, David E, Hansen, Wolfgang
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
EMN Meeting
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
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Summary:We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of local droplet etching using Ga droplets with long-time thermal annealing. The cone-like shape of inverted nanoholes formed by droplet etching is transformed during long-time annealing into widened holes with flat bottoms and reduced depth. This is qualitatively understood using a simplified model of mass transport incorporating surface diffusion and evaporation. The hole diameter can be thermally controlled by varying the annealing time or annealing temperature which provides a method for tuning template morphology for subsequent nanostructure nucleation. We also demonstrate the integration of the combined droplet/thermal etching process with heteroepitaxy by the thermal control of hole depth in AlGaAs layers.
ISSN:1931-7573
1556-276X
1556-276X
DOI:10.1186/1556-276X-9-285