Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintention...

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Bibliographic Details
Published in:Nature communications 2014-06, Vol.5 (1), p.3990-3990, Article 3990
Main Authors: Mikheev, Evgeny, Hoskins, Brian D., Strukov, Dmitri B., Stemmer, Susanne
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/301/357
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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Summary:Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO 3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices. Understanding the resistive switching mechanism in oxide-based memories is an ongoing challenge. Here, the authors isolate an unintentional interfacial layer as the origin of resistive switching in Pt/Nb:SrTiO 3 junctions, and show that suitable processing can remove this unwanted contribution.
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms4990