Synthetic magnetoelectric coupling in a nanocomposite multiferroic

Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution to realize magnetoelectric coupling between ferromagnetic and ferroelectric order parameters. Despite having antiferromagnetic order, BiFeO 3 (BFO) has neverthele...

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Bibliographic Details
Published in:Scientific reports 2015-03, Vol.5 (1), p.9089-9089, Article 9089
Main Authors: Jain, P., Wang, Q., Roldan, M., Glavic, A., Lauter, V., Urban, C., Bi, Z., Ahmed, T., Zhu, J., Varela, M., Jia, Q. X., Fitzsimmons, M. R.
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/301/119/544
639/301/119/996
639/301/357/997
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Data storage
Dielectric properties
Electrical properties
Humanities and Social Sciences
Magnetic fields
Magnetism
magnetoelectrics
MATERIALS SCIENCE
multidisciplinary
multiferroics
NANOSCIENCE AND NANOTECHNOLOGY
oxides
polarized neutron reflectometry
Science
Temperature effects
thin films
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Summary:Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution to realize magnetoelectric coupling between ferromagnetic and ferroelectric order parameters. Despite having antiferromagnetic order, BiFeO 3 (BFO) has nevertheless been a key material due to excellent ferroelectric properties at room temperature. We studied a superlattice composed of 8 repetitions of 6 unit cells of La 0.7 Sr 0.3 MnO 3 (LSMO) grown on 5 unit cells of BFO. Significant net uncompensated magnetization in BFO, an insulating superlattice, is demonstrated using polarized neutron reflectometry. Remarkably, the magnetization enables magnetic field to change the dielectric properties of the superlattice, which we cite as an example of synthetic magnetoelectric coupling. Importantly, controlled creation of magnetic moment in BFO is a much needed path toward design and implementation of integrated oxide devices for next generation magnetoelectric data storage platforms.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep09089