Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependen...

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Bibliographic Details
Published in:Scientific reports 2015-04, Vol.5 (1), p.9703-9703, Article 9703
Main Authors: Sousa, Marco A., Esteves, Teresa C., Sedrine, Nabiha Ben, Rodrigues, Joana, Lourenço, Márcio B., Redondo-Cubero, Andrés, Alves, Eduardo, O'Donnell, Kevin P., Bockowski, Michal, Wetzel, Christian, Correia, Maria R., Lorenz, Katharina, Monteiro, Teresa
Format: Article
Language:English
Subjects:
140/125
140/133
639/624/1020
639/624/399
Annealing
Humanities and Social Sciences
Ion implantation
Light emitting diodes
Low temperature
Luminescence
multidisciplinary
Nitrogen
Optical properties
Optics
Organic chemicals
Photons
Physics
Science
Spectroscopy
Temperature effects
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Summary:We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep09703