Maskless inverted pyramid texturization of silicon

We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2015-06, Vol.5 (1), p.10843-10843, Article 10843
Main Authors: Wang, Yan, Yang, Lixia, Liu, Yaoping, Mei, Zengxia, Chen, Wei, Li, Junqiang, Liang, Huili, Kuznetsov, Andrej, Xiaolong, Du
Format: Article
Language:English
Subjects:
639/301/299/161
639/301/299/946
Data processing
Etching
Humanities and Social Sciences
multidisciplinary
Nanoparticles
Photovoltaic cells
Photovoltaics
Science
Silicon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO 3 ) 2 / HF / H 2 O 2 / H 2 O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep10843