Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

A Ta/TaO x /Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance and retention propertie...

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Bibliographic Details
Published in:Scientific reports 2015-09, Vol.5 (1), p.14053, Article 14053
Main Authors: Kyu Yang, Min, Ju, Hyunsu, Hwan Kim, Gun, Lee, Jeon-Kook, Ryu, Han-Cheol
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/301/357
Conduction
Humanities and Social Sciences
multidisciplinary
Science
Thin films
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Summary:A Ta/TaO x /Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaO x mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaO x thin film at the LRS.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep14053