AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively...

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Published in:Scientific reports 2015-09, Vol.5 (1), p.14092-14092, Article 14092
Main Authors: Liu, Xinke, Lu, Youming, Yu, Wenjie, Wu, Jing, He, Jiazhu, Tang, Dan, Liu, Zhihong, Somasuntharam, Pannirselvam, Zhu, Deliang, Liu, Wenjun, Cao, Peijiang, Han, Sun, Chen, Shaojun, Seow Tan, Leng
Format: Article
Language:English
Subjects:
639/166/987
639/301/1005/1007
Atomic force microscopy
Chemical vapor deposition
Conduction
Electric fields
Gating
High temperature
Humanities and Social Sciences
Laboratories
Microscopy
Mobility
Molecular beam epitaxy
multidisciplinary
Organic chemicals
Polymers
Science
Transistors
X-ray diffraction
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Summary:Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD) and ferroelectric hysteresis loop measurement.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep14092