Projected phase-change memory devices

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power re...

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Bibliographic Details
Published in:Nature communications 2015-09, Vol.6 (1), p.8181-8181, Article 8181
Main Authors: Koelmans, Wabe W., Sebastian, Abu, Jonnalagadda, Vara Prasad, Krebs, Daniel, Dellmann, Laurent, Eleftheriou, Evangelos
Format: Article
Language:English
Subjects:
142/126
639/766/25
639/925/927/1007
Active control
Brain
Computation
Computer simulation
Data storage
Design
Drift
Experimentation
Finite element method
Humanities and Social Sciences
Information processing
Information retrieval
Information storage
Mathematical models
Memory
Memory devices
multidisciplinary
Noise
Phase transitions
Science
Science (multidisciplinary)
Storage
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Summary:Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states. Nanoscale resistive memory devices could become critical building blocks in emerging brain-inspired computing paradigms. Here, the authors demonstrate such a device—a projected memory cell—based on a phase-change material that decouples resistance storage from the information-retrieval process.
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms9181