Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods

Characterization of the diffusion length of solar cells in space has been widely studied using various methods, but few studies have focused on a fast, simple way to obtain the quantified diffusion length distribution on a silicon wafer. In this work, we present two different facile methods of doing...

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Bibliographic Details
Published in:Scientific reports 2015-09, Vol.5 (1), p.14084-14084, Article 14084
Main Authors: Lou, Shishu, Zhu, Huishi, Hu, Shaoxu, Zhao, Chunhua, Han, Peide
Format: Article
Language:English
Subjects:
639/624/1075/524
639/766/1130
639/766/25
Diffusion
Humanities and Social Sciences
Luminescence
multidisciplinary
Photons
Photovoltaic cells
Science
Silicon
Silicon wafers
Solar cells
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Summary:Characterization of the diffusion length of solar cells in space has been widely studied using various methods, but few studies have focused on a fast, simple way to obtain the quantified diffusion length distribution on a silicon wafer. In this work, we present two different facile methods of doing this by fitting photoluminescence images taken in two different wavelength ranges or from different sides. These methods, which are based on measuring the ratio of two photoluminescence images, yield absolute values of the diffusion length and are less sensitive to the inhomogeneity of the incident laser beam. A theoretical simulation and experimental demonstration of this method are presented. The diffusion length distributions on a polycrystalline silicon wafer obtained by the two methods show good agreement.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep14084