Hierarchy of fillings for the FQHE in monolayer graphene

In this paper, the commensurability conditions, which originated from the unique topology of two-dimensional systems, are applied to determine the quantum Hall effect hierarchy in the case of a monolayer graphene. The fundamental difference in a definition of a typical semiconductor and a monolayer...

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Bibliographic Details
Published in:Scientific reports 2015-09, Vol.5 (1), p.14287-14287, Article 14287
Main Authors: Łydżba, Patrycja, Jacak, Lucjan, Jacak, Janusz
Format: Article
Language:English
Subjects:
639/766/119/2794
639/766/483/640
Electromagnetism
Humanities and Social Sciences
multidisciplinary
Quantum theory
Science
Topology
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Summary:In this paper, the commensurability conditions, which originated from the unique topology of two-dimensional systems, are applied to determine the quantum Hall effect hierarchy in the case of a monolayer graphene. The fundamental difference in a definition of a typical semiconductor and a monolayer graphene filling factor is pointed out. The calculations are undertaken for all spin-valley branches of two lowest Landau levels, since only they are currently experimentally accessible. The obtained filling factors are compared with the experimental data and a very good agreement is achieved. The work also introduces a concept of the single-loop fractional quantum Hall effect.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep14287