Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe 3 O 4 /MgO/Fe 3 O 4 MTJ structures have been far from promising. Finding suitable barrier layer mater...

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Published in:Scientific reports 2015-11, Vol.5 (1), p.15984-15984, Article 15984
Main Authors: Wu, Han-Chun, Coileáin, Cormac Ó, Abid, Mourad, Mauit, Ozhet, Syrlybekov, Askar, Khalid, Abbas, Xu, Hongjun, Gatensby, Riley, Jing Wang, Jing, Liu, Huajun, Yang, Li, Duesberg, Georg S., Zhang, Hong-Zhou, Abid, Mohamed, Shvets, Igor V.
Format: Article
Language:English
Subjects:
639/766/119/1001
639/766/119/995
639/766/119/997
Graphene
Humanities and Social Sciences
Interfaces
Iron oxides
Laboratories
Magnetite
Microscopy
Molecular beam epitaxy
Molybdenum
Molybdenum disulfide
multidisciplinary
Physics
Science
Single crystals
Temperature effects
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Summary:Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe 3 O 4 /MgO/Fe 3 O 4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe 3 O 4 at the interface between Fe 3 O 4 layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS 2 ) is a transition metal dichalcogenide (TMD) semiconductor with distinctive electronic, optical and catalytic properties. Here, we show based on the first principle calculations that Fe 3 O 4 keeps a nearly fully spin polarized electron band at the interface between MoS 2 and Fe 3 O 4 . We also present the first attempt to fabricate the Fe 3 O 4 /MoS 2 /Fe 3 O 4 MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS 2 can be a good barrier material for Fe 3 O 4 based MTJs. Our calculations also indicate that junctions incorporating monolayer or bilayer MoS 2 are metallic.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep15984