Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga 0.665 In 0.335 As x Sb 1 − x /InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detec...

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Published in:Nanoscale research letters 2015-12, Vol.10 (1), p.471-7, Article 471
Main Authors: Motyka, Marcin, Sęk, Grzegorz, Ryczko, Krzysztof, Dyksik, Mateusz, Weih, Robert, Patriarche, Gilles, Misiewicz, Jan, Kamp, Martin, Höfling, Sven
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Language:English
Subjects:
Cascade lasers
Chemistry and Materials Science
EMN Meeting
Image transmission
Indium arsenides
Materials Science
Mathematical analysis
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanostructure
Nanotechnology
Nanotechnology and Microengineering
Optical transition
Quantum wells
Spectroscopy
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cited_by cdi_FETCH-LOGICAL-c503t-6c1f798dbc63a4af138cade80a88f9ea268df2c66dae4464a0ae81a9ac55bfde3
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creator Motyka, Marcin
Sęk, Grzegorz
Ryczko, Krzysztof
Dyksik, Mateusz
Weih, Robert
Patriarche, Gilles
Misiewicz, Jan
Kamp, Martin
Höfling, Sven
description The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga 0.665 In 0.335 As x Sb 1 − x /InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.
doi_str_mv 10.1186/s11671-015-1183-x
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subjects Cascade lasers
Chemistry and Materials Science
EMN Meeting
Image transmission
Indium arsenides
Materials Science
Mathematical analysis
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanostructure
Nanotechnology
Nanotechnology and Microengineering
Optical transition
Quantum wells
Spectroscopy
title Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
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