Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensio...

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Bibliographic Details
Published in:Scientific reports 2016-01, Vol.6 (1), p.19314-19314, Article 19314
Main Authors: Park, Jun-Young, Moon, Dong-Il, Seol, Myeong-Lok, Jeon, Chang-Hoon, Jeon, Gwang-Jae, Han, Jin-Woo, Kim, Choong-Ki, Park, Sang-Jae, Lee, Hee Chul, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
639/166/987
639/925/927/1007
Electron microscopy
Electronics industry
Humanities and Social Sciences
multidisciplinary
Nanotechnology
Nanowires
Scanning electron microscopy
Science
Silicon
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Summary:The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep19314