Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensio...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2016-01, Vol.6 (1), p.19314-19314, Article 19314
Main Authors: Park, Jun-Young, Moon, Dong-Il, Seol, Myeong-Lok, Jeon, Chang-Hoon, Jeon, Gwang-Jae, Han, Jin-Woo, Kim, Choong-Ki, Park, Sang-Jae, Lee, Hee Chul, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
639/166/987
639/925/927/1007
Electron microscopy
Electronics industry
Humanities and Social Sciences
multidisciplinary
Nanotechnology
Nanowires
Scanning electron microscopy
Science
Silicon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363
cites cdi_FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363
container_end_page 19314
container_issue 1
container_start_page 19314
container_title Scientific reports
container_volume 6
creator Park, Jun-Young
Moon, Dong-Il
Seol, Myeong-Lok
Jeon, Chang-Hoon
Jeon, Gwang-Jae
Han, Jin-Woo
Kim, Choong-Ki
Park, Sang-Jae
Lee, Hee Chul
Choi, Yang-Kyu
description The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.
doi_str_mv 10.1038/srep19314
format article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4726027</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1899046668</sourcerecordid><originalsourceid>FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363</originalsourceid><addsrcrecordid>eNplkU-LFDEQxYMo7rLuwS8gAS8qtCbp7iR9EWTwHyx40XOoTlfPZE0nbdLj0vjljc44jFqXVKgfL_XyCHnM2UvOav0qJ5x5V_PmHrkUrGkrUQtx_6y_INc537JSrega3j0kF0IqLRTTl-THJoYlRe-h90jRo12Ss-AphIHOuzX_vvQJ4esQ7wKNI52jXyub1ryA9y4gzc47GwMNEOKdS5hpv9Jlh2kqwEohZ5cXHI7qcXLbBIuL4RF5MILPeH08r8iXd28_bz5UN5_ef9y8ualsy5qlakUreYuyG4BJLhqmauxg6Efdg5LYiIG1SoG0XIAaYdCANYwj6mIWeC3rK_L6oDvv-wkHi8UxeDMnN0FaTQRn_p4EtzPb-N00SkgmVBF4dhRI8dse82Imly2WTwsY99lwJVnHpJZdQZ_-g97GfQrFnuG661gjpdSFen6gbIq5BDieluHM_ErVnFIt7JPz7U_knwwL8OIA5DIKW0xnT_6n9hOh7a_i</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1899046668</pqid></control><display><type>article</type><title>Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration</title><source>Full-Text Journals in Chemistry (Open access)</source><source>Publicly Available Content (ProQuest)</source><source>PubMed Central</source><source>Springer Nature - nature.com Journals - Fully Open Access</source><creator>Park, Jun-Young ; Moon, Dong-Il ; Seol, Myeong-Lok ; Jeon, Chang-Hoon ; Jeon, Gwang-Jae ; Han, Jin-Woo ; Kim, Choong-Ki ; Park, Sang-Jae ; Lee, Hee Chul ; Choi, Yang-Kyu</creator><creatorcontrib>Park, Jun-Young ; Moon, Dong-Il ; Seol, Myeong-Lok ; Jeon, Chang-Hoon ; Jeon, Gwang-Jae ; Han, Jin-Woo ; Kim, Choong-Ki ; Park, Sang-Jae ; Lee, Hee Chul ; Choi, Yang-Kyu</creatorcontrib><description>The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep19314</identifier><identifier>PMID: 26782708</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/166/987 ; 639/925/927/1007 ; Electron microscopy ; Electronics industry ; Humanities and Social Sciences ; multidisciplinary ; Nanotechnology ; Nanowires ; Scanning electron microscopy ; Science ; Silicon</subject><ispartof>Scientific reports, 2016-01, Vol.6 (1), p.19314-19314, Article 19314</ispartof><rights>The Author(s) 2016</rights><rights>Copyright Nature Publishing Group Jan 2016</rights><rights>Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363</citedby><cites>FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1899046668/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1899046668?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,881,25732,27903,27904,36991,36992,44569,53770,53772,74873</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26782708$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Jun-Young</creatorcontrib><creatorcontrib>Moon, Dong-Il</creatorcontrib><creatorcontrib>Seol, Myeong-Lok</creatorcontrib><creatorcontrib>Jeon, Chang-Hoon</creatorcontrib><creatorcontrib>Jeon, Gwang-Jae</creatorcontrib><creatorcontrib>Han, Jin-Woo</creatorcontrib><creatorcontrib>Kim, Choong-Ki</creatorcontrib><creatorcontrib>Park, Sang-Jae</creatorcontrib><creatorcontrib>Lee, Hee Chul</creatorcontrib><creatorcontrib>Choi, Yang-Kyu</creatorcontrib><title>Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.</description><subject>639/166/987</subject><subject>639/925/927/1007</subject><subject>Electron microscopy</subject><subject>Electronics industry</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Scanning electron microscopy</subject><subject>Science</subject><subject>Silicon</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNplkU-LFDEQxYMo7rLuwS8gAS8qtCbp7iR9EWTwHyx40XOoTlfPZE0nbdLj0vjljc44jFqXVKgfL_XyCHnM2UvOav0qJ5x5V_PmHrkUrGkrUQtx_6y_INc537JSrega3j0kF0IqLRTTl-THJoYlRe-h90jRo12Ss-AphIHOuzX_vvQJ4esQ7wKNI52jXyub1ryA9y4gzc47GwMNEOKdS5hpv9Jlh2kqwEohZ5cXHI7qcXLbBIuL4RF5MILPeH08r8iXd28_bz5UN5_ef9y8ualsy5qlakUreYuyG4BJLhqmauxg6Efdg5LYiIG1SoG0XIAaYdCANYwj6mIWeC3rK_L6oDvv-wkHi8UxeDMnN0FaTQRn_p4EtzPb-N00SkgmVBF4dhRI8dse82Imly2WTwsY99lwJVnHpJZdQZ_-g97GfQrFnuG661gjpdSFen6gbIq5BDieluHM_ErVnFIt7JPz7U_knwwL8OIA5DIKW0xnT_6n9hOh7a_i</recordid><startdate>20160119</startdate><enddate>20160119</enddate><creator>Park, Jun-Young</creator><creator>Moon, Dong-Il</creator><creator>Seol, Myeong-Lok</creator><creator>Jeon, Chang-Hoon</creator><creator>Jeon, Gwang-Jae</creator><creator>Han, Jin-Woo</creator><creator>Kim, Choong-Ki</creator><creator>Park, Sang-Jae</creator><creator>Lee, Hee Chul</creator><creator>Choi, Yang-Kyu</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20160119</creationdate><title>Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration</title><author>Park, Jun-Young ; Moon, Dong-Il ; Seol, Myeong-Lok ; Jeon, Chang-Hoon ; Jeon, Gwang-Jae ; Han, Jin-Woo ; Kim, Choong-Ki ; Park, Sang-Jae ; Lee, Hee Chul ; Choi, Yang-Kyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>639/166/987</topic><topic>639/925/927/1007</topic><topic>Electron microscopy</topic><topic>Electronics industry</topic><topic>Humanities and Social Sciences</topic><topic>multidisciplinary</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Scanning electron microscopy</topic><topic>Science</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Jun-Young</creatorcontrib><creatorcontrib>Moon, Dong-Il</creatorcontrib><creatorcontrib>Seol, Myeong-Lok</creatorcontrib><creatorcontrib>Jeon, Chang-Hoon</creatorcontrib><creatorcontrib>Jeon, Gwang-Jae</creatorcontrib><creatorcontrib>Han, Jin-Woo</creatorcontrib><creatorcontrib>Kim, Choong-Ki</creatorcontrib><creatorcontrib>Park, Sang-Jae</creatorcontrib><creatorcontrib>Lee, Hee Chul</creatorcontrib><creatorcontrib>Choi, Yang-Kyu</creatorcontrib><collection>SpringerOpen</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Health Medical collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>ProQuest Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>ProQuest Health &amp; Medical Complete (Alumni)</collection><collection>Biological Sciences</collection><collection>Health &amp; Medical Collection (Alumni Edition)</collection><collection>PML(ProQuest Medical Library)</collection><collection>ProQuest Science Journals</collection><collection>ProQuest Biological Science Journals</collection><collection>Publicly Available Content (ProQuest)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Jun-Young</au><au>Moon, Dong-Il</au><au>Seol, Myeong-Lok</au><au>Jeon, Chang-Hoon</au><au>Jeon, Gwang-Jae</au><au>Han, Jin-Woo</au><au>Kim, Choong-Ki</au><au>Park, Sang-Jae</au><au>Lee, Hee Chul</au><au>Choi, Yang-Kyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-01-19</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>19314</spage><epage>19314</epage><pages>19314-19314</pages><artnum>19314</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>26782708</pmid><doi>10.1038/srep19314</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2045-2322
ispartof Scientific reports, 2016-01, Vol.6 (1), p.19314-19314, Article 19314
issn 2045-2322
2045-2322
language eng
recordid cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4726027
source Full-Text Journals in Chemistry (Open access); Publicly Available Content (ProQuest); PubMed Central; Springer Nature - nature.com Journals - Fully Open Access
subjects 639/166/987
639/925/927/1007
Electron microscopy
Electronics industry
Humanities and Social Sciences
multidisciplinary
Nanotechnology
Nanowires
Scanning electron microscopy
Science
Silicon
title Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A17%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Controllable%20electrical%20and%20physical%20breakdown%20of%20poly-crystalline%20silicon%20nanowires%20by%20thermally%20assisted%20electromigration&rft.jtitle=Scientific%20reports&rft.au=Park,%20Jun-Young&rft.date=2016-01-19&rft.volume=6&rft.issue=1&rft.spage=19314&rft.epage=19314&rft.pages=19314-19314&rft.artnum=19314&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/srep19314&rft_dat=%3Cproquest_pubme%3E1899046668%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c504t-525615e69da06124073e9adbf8ba76e42d0577a6c12a7fad8ae3affe8941a1363%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1899046668&rft_id=info:pmid/26782708&rfr_iscdi=true