Anomalous Inner-Gap Structure in Transport Characteristics of Superconducting Junctions with Degraded Interfaces

• Published in: Nanoscale research letters 2016-12, Vol.11 (1), p.58-58, Article 58
• Main Authors: Zhitlukhina, E., Devyatov, I., Egorov, O., Belogolovskii, M., Seidel, P.
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Nanotechnology and Nanomaterials (NANO-2015)
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-016-1285-0

Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present or not as severe for traditional superconducting materials. In this work, we explain unexpected features in related transport characteristics as an effect of a degraded nanoscaled sheath at the superconductor surface. A model capturing the main aspects of the ballistic charge transport across hybrid superconducting structures with normally conducting nanometer-thick interlayers is proposed. The calculations are based on a scattering formalism taking into account Andreev electron-into-hole (and inverse) reflections at normal metal-superconductor interfaces as well as transmission and backscattering events in insulating barriers between the electrodes. Current-voltage characteristics of such devices exhibit a rich diversity of anomalous (from the viewpoint of the standard theory) features, in particular shift of differential-conductance maxima at gap voltages to lower positions and appearance of well-defined dips instead expected coherence peaks. We compare our results with related experimental data.