Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist

Given the importance of complex nanofeatures in the filed of micro-/nanoelectronics particularly in the area of high-density magnetic recording, photonic crystals, information storage, micro-lens arrays, tissue engineering and catalysis, the present work demonstrates the development of new methodolo...

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Bibliographic Details
Published in:Scientific reports 2016-03, Vol.6 (1), p.22664-22664, Article 22664
Main Authors: Ghosh, Subrata, Satyanarayana, V. S. V., Pramanick, Bulti, Sharma, Satinder K., Pradeep, Chullikkattil P., Morales-Reyes, Israel, Batina, Nikola, Gonsalves, Kenneth E.
Format: Article
Language:English
Subjects:
142/126
639/301/1005/1007
639/638/298/923/1028
Catalysis
Crystals
Elbow
Humanities and Social Sciences
Information storage
Integration
multidisciplinary
Photodegradation
Photons
Photosensitivity
Polarity
Polymers
Science
Science (multidisciplinary)
Silicon
Tissue engineering
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Summary:Given the importance of complex nanofeatures in the filed of micro-/nanoelectronics particularly in the area of high-density magnetic recording, photonic crystals, information storage, micro-lens arrays, tissue engineering and catalysis, the present work demonstrates the development of new methodology for patterning complex nanofeatures using a recently developed non-chemically amplified photoresist (n-CARs) poly(4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate) (polyMAPDST) with the help of extreme ultraviolet lithography (EUVL) as patterning tool. The photosensitivity of polyMAPDST is mainly due to the presence of radiation sensitive trifluoromethanesulfonate unit (triflate group) which undergoes photodegradation upon exposure with EUV photons, and thus brings in polarity change in the polymer structure. Integration of such radiation sensitive unit into polymer network avoids the need of chemical amplification which is otherwise needed for polarity switching in the case of chemically amplified photoresists (CARs). Indeed, we successfully patterned highly ordered wide-raging dense nanofeatures that include nanodots, nanowaves, nanoboats, star-elbow etc. All these developed nanopatterns have been well characterized by FESEM and AFM techniques. Finally, the potential of polyMAPDST has been established by successful transfer of patterns into silicon substrate through adaptation of compatible etch recipes.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep22664