Effects of intervalley scattering on the transport properties in one−dimensional valleytronic devices

Based on a one-dimensional valley junction model, the effects of intervalley scattering on the valley transport properties are studied. We analytically investigate the valley transport phenomena in three typical junctions with both intervalley and intravalley scattering included. For the tunneling b...

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Bibliographic Details
Published in:Scientific reports 2016-03, Vol.6 (1), p.23211-23211, Article 23211
Main Authors: Zhou, Jiaojiao, Cheng, Shuguang, You, Wen-Long, Jiang, Hua
Format: Article
Language:English
Subjects:
639/301/119/995
639/766/119/995
Humanities and Social Sciences
multidisciplinary
Orbits
Polarization
Probability
Science
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Summary:Based on a one-dimensional valley junction model, the effects of intervalley scattering on the valley transport properties are studied. We analytically investigate the valley transport phenomena in three typical junctions with both intervalley and intravalley scattering included. For the tunneling between two gapless valley materials, different from conventional Klein tunneling theory, the transmission probability of the carrier is less than 100% while the pure valley polarization feature still holds. If the junction is composed of at least one gapped valley material, the valley polarization of the carrier is generally imperfect during the tunneling process. Interestingly, in such circumstance, we discover a resonance of valley polarization that can be tuned by the junction potential. The extension of our results to realistic valley materials are also discussed.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep23211