Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide

The majority electron density as a function of the Fermi energy is calculated in zinc blende, n-type GaSb for donor densities between 10(16) cm(-3) and 10(19) cm(-3). These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at Γ, L,...

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Bibliographic Details
Published in:Journal of research of the National Institute of Standards and Technology 2003-05, Vol.108 (3), p.193-197
Main Authors: Bennett, Herbert S, Hung, Howard
Format: Article
Language:English
Subjects:
Electrons
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Summary:The majority electron density as a function of the Fermi energy is calculated in zinc blende, n-type GaSb for donor densities between 10(16) cm(-3) and 10(19) cm(-3). These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at Γ, L, and X and one equivalent valence band at Γ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a nondestructive method for wafer acceptance tests.
ISSN:1044-677X
2165-7254
DOI:10.6028/jres.108.019