Formation of Magnetic Anisotropy by Lithography

Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropi...

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Bibliographic Details
Published in:Scientific reports 2016-05, Vol.6 (1), p.26709-26709, Article 26709
Main Authors: Kim, Si Nyeon, Nam, Yoon Jae, Kim, Yang Doo, Choi, Jun Woo, Lee, Heon, Lim, Sang Ho
Format: Article
Language:English
Subjects:
142/126
639/301/1005/1008
639/301/119/997
Anisotropy
Humanities and Social Sciences
Interfaces
Lithography
Magnetic fields
Magnetic thin films
Microscopy
multidisciplinary
Quantitative analysis
Science
Science (multidisciplinary)
Thin films
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Summary:Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm 2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep26709