Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications

In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO 2 ) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved a...

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Bibliographic Details
Published in:Nanoscale research letters 2016-12, Vol.11 (1), p.275-5, Article 275
Main Authors: Chen, Huey-Ru, Chen, Ying-Chung, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Shih, Chih-Cheng, Chuang, Nai-Chuan, Wang, Kao-Yuan
Format: Article
Language:English
Subjects:
Carbon dioxide
Chemistry and Materials Science
Current carriers
Emission
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Resistors
Tantalum nitrides
Temperature sensors
Thin films
Vacancies
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Summary:In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO 2 ) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO 2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO 2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO 2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-016-1480-z