Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning tra...

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Bibliographic Details
Published in:Scientific reports 2016-06, Vol.6 (1), p.28459-28459, Article 28459
Main Authors: Carvalho, Daniel, Müller-Caspary, Knut, Schowalter, Marco, Grieb, Tim, Mehrtens, Thorsten, Rosenauer, Andreas, Ben, Teresa, García, Rafael, Redondo-Cubero, Andrés, Lorenz, Katharina, Daudin, Bruno, Morales, Francisco M.
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/301/930/328/2082
639/766/119/995
Condensed Matter
Electrons
Engineering Sciences
Humanities and Social Sciences
Materials Science
Micro and nanotechnologies
Microelectronics
multidisciplinary
Optics
Photonic
Physics
Science
Transmission electron microscopy
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Summary:The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep28459