Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalize...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2016-07, Vol.6 (1), p.29112-29112, Article 29112
Main Authors: Gao, Xian, Wei, Zhipeng, Zhao, Fenghuan, Yang, Yahui, Chen, Rui, Fang, Xuan, Tang, Jilong, Fang, Dan, Wang, Dengkui, Li, Ruixue, Ge, Xiaotian, Ma, Xiaohui, Wang, Xiaohua
Format: Article
Language:English
Subjects:
639/301/1019
639/624/399
639/766/1130
639/766/119/544
Alloys
Alloys - chemistry
Emissions
Energy
Gallium arsenide
Humanities and Social Sciences
Investigations
Low temperature
Materials Testing - methods
Molecular beam epitaxy
multidisciplinary
Optical properties
Science
Spectrum Analysis
Temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep29112