Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalize...

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Published in:Scientific reports 2016-07, Vol.6 (1), p.29112-29112, Article 29112
Main Authors: Gao, Xian, Wei, Zhipeng, Zhao, Fenghuan, Yang, Yahui, Chen, Rui, Fang, Xuan, Tang, Jilong, Fang, Dan, Wang, Dengkui, Li, Ruixue, Ge, Xiaotian, Ma, Xiaohui, Wang, Xiaohua
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639/301/1019
639/624/399
639/766/1130
639/766/119/544
Alloys
Alloys - chemistry
Emissions
Energy
Gallium arsenide
Humanities and Social Sciences
Investigations
Low temperature
Materials Testing - methods
Molecular beam epitaxy
multidisciplinary
Optical properties
Science
Spectrum Analysis
Temperature
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cited_by cdi_FETCH-LOGICAL-c504t-77bbdb3eada76aa35cb18fd834783858fa3ac56fa4a3f3da743bc7e69958b3b63
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container_title Scientific reports
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creator Gao, Xian
Wei, Zhipeng
Zhao, Fenghuan
Yang, Yahui
Chen, Rui
Fang, Xuan
Tang, Jilong
Fang, Dan
Wang, Dengkui
Li, Ruixue
Ge, Xiaotian
Ma, Xiaohui
Wang, Xiaohua
description We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
doi_str_mv 10.1038/srep29112
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fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4933967</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1803795591</sourcerecordid><originalsourceid>FETCH-LOGICAL-c504t-77bbdb3eada76aa35cb18fd834783858fa3ac56fa4a3f3da743bc7e69958b3b63</originalsourceid><addsrcrecordid>eNpl0UFPHCEUB3DS1KhRD36BhqSX2mTtAMMMXJqsxq6brOlBPZMHw2wxs7CFGXX76ctm183WcoHk_fJ48EfonBSXpGDiW4p2SSUh9AM6pkXJR5RR-nHvfITOUnoq8uJUlkQeoiNaM0Gqkhyjx6l_tql3c-hd8Di0eBYMdO6PbfB9D71N2Hk8gXG61_hm6TpY2ZjwJIYXj_UK34XOmqGDiK8sLNaih9fVKTpooUv2bLufoMcfNw_Xt6PZz8n0ejwbGV6U_aiutW40s9BAXQEwbjQRbSNYWQsmuGiBgeFVCyWwlmVUMm1qW0nJhWa6Yifo-6bvctAL2xjr-widWka3gLhSAZz6t-LdLzUPz6qUjMmqzg2-bBvE8HvIH6EWLhnbdeBtGJIiomC15FySTD-_o09hiD4_LytCuKCErNXFRpkYUo6m3Q1DCrXOS-3yyvbT_vQ7-ZZOBl83IOWSn9u4d-V_3f4C9K6fvg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1811582111</pqid></control><display><type>article</type><title>Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy</title><source>Open Access: PubMed Central</source><source>Publicly Available Content (ProQuest)</source><source>Free Full-Text Journals in Chemistry</source><source>Springer Nature - nature.com Journals - Fully Open Access</source><creator>Gao, Xian ; Wei, Zhipeng ; Zhao, Fenghuan ; Yang, Yahui ; Chen, Rui ; Fang, Xuan ; Tang, Jilong ; Fang, Dan ; Wang, Dengkui ; Li, Ruixue ; Ge, Xiaotian ; Ma, Xiaohui ; Wang, Xiaohua</creator><creatorcontrib>Gao, Xian ; Wei, Zhipeng ; Zhao, Fenghuan ; Yang, Yahui ; Chen, Rui ; Fang, Xuan ; Tang, Jilong ; Fang, Dan ; Wang, Dengkui ; Li, Ruixue ; Ge, Xiaotian ; Ma, Xiaohui ; Wang, Xiaohua</creatorcontrib><description>We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep29112</identifier><identifier>PMID: 27381641</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/301/1019 ; 639/624/399 ; 639/766/1130 ; 639/766/119/544 ; Alloys ; Alloys - chemistry ; Emissions ; Energy ; Gallium arsenide ; Humanities and Social Sciences ; Investigations ; Low temperature ; Materials Testing - methods ; Molecular beam epitaxy ; multidisciplinary ; Optical properties ; Science ; Spectrum Analysis ; Temperature</subject><ispartof>Scientific reports, 2016-07, Vol.6 (1), p.29112-29112, Article 29112</ispartof><rights>The Author(s) 2016</rights><rights>Copyright Nature Publishing Group Jul 2016</rights><rights>Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c504t-77bbdb3eada76aa35cb18fd834783858fa3ac56fa4a3f3da743bc7e69958b3b63</citedby><cites>FETCH-LOGICAL-c504t-77bbdb3eada76aa35cb18fd834783858fa3ac56fa4a3f3da743bc7e69958b3b63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1811582111/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1811582111?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25753,27924,27925,37012,37013,44590,53791,53793,75126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27381641$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Gao, Xian</creatorcontrib><creatorcontrib>Wei, Zhipeng</creatorcontrib><creatorcontrib>Zhao, Fenghuan</creatorcontrib><creatorcontrib>Yang, Yahui</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><creatorcontrib>Fang, Xuan</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Fang, Dan</creatorcontrib><creatorcontrib>Wang, Dengkui</creatorcontrib><creatorcontrib>Li, Ruixue</creatorcontrib><creatorcontrib>Ge, Xiaotian</creatorcontrib><creatorcontrib>Ma, Xiaohui</creatorcontrib><creatorcontrib>Wang, Xiaohua</creatorcontrib><title>Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.</description><subject>639/301/1019</subject><subject>639/624/399</subject><subject>639/766/1130</subject><subject>639/766/119/544</subject><subject>Alloys</subject><subject>Alloys - chemistry</subject><subject>Emissions</subject><subject>Energy</subject><subject>Gallium arsenide</subject><subject>Humanities and Social Sciences</subject><subject>Investigations</subject><subject>Low temperature</subject><subject>Materials Testing - methods</subject><subject>Molecular beam epitaxy</subject><subject>multidisciplinary</subject><subject>Optical properties</subject><subject>Science</subject><subject>Spectrum Analysis</subject><subject>Temperature</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNpl0UFPHCEUB3DS1KhRD36BhqSX2mTtAMMMXJqsxq6brOlBPZMHw2wxs7CFGXX76ctm183WcoHk_fJ48EfonBSXpGDiW4p2SSUh9AM6pkXJR5RR-nHvfITOUnoq8uJUlkQeoiNaM0Gqkhyjx6l_tql3c-hd8Di0eBYMdO6PbfB9D71N2Hk8gXG61_hm6TpY2ZjwJIYXj_UK34XOmqGDiK8sLNaih9fVKTpooUv2bLufoMcfNw_Xt6PZz8n0ejwbGV6U_aiutW40s9BAXQEwbjQRbSNYWQsmuGiBgeFVCyWwlmVUMm1qW0nJhWa6Yifo-6bvctAL2xjr-widWka3gLhSAZz6t-LdLzUPz6qUjMmqzg2-bBvE8HvIH6EWLhnbdeBtGJIiomC15FySTD-_o09hiD4_LytCuKCErNXFRpkYUo6m3Q1DCrXOS-3yyvbT_vQ7-ZZOBl83IOWSn9u4d-V_3f4C9K6fvg</recordid><startdate>20160706</startdate><enddate>20160706</enddate><creator>Gao, Xian</creator><creator>Wei, Zhipeng</creator><creator>Zhao, Fenghuan</creator><creator>Yang, Yahui</creator><creator>Chen, Rui</creator><creator>Fang, Xuan</creator><creator>Tang, Jilong</creator><creator>Fang, Dan</creator><creator>Wang, Dengkui</creator><creator>Li, Ruixue</creator><creator>Ge, Xiaotian</creator><creator>Ma, Xiaohui</creator><creator>Wang, Xiaohua</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20160706</creationdate><title>Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy</title><author>Gao, Xian ; Wei, Zhipeng ; Zhao, Fenghuan ; Yang, Yahui ; Chen, Rui ; Fang, Xuan ; Tang, Jilong ; Fang, Dan ; Wang, Dengkui ; Li, Ruixue ; Ge, Xiaotian ; Ma, Xiaohui ; Wang, Xiaohua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c504t-77bbdb3eada76aa35cb18fd834783858fa3ac56fa4a3f3da743bc7e69958b3b63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>639/301/1019</topic><topic>639/624/399</topic><topic>639/766/1130</topic><topic>639/766/119/544</topic><topic>Alloys</topic><topic>Alloys - chemistry</topic><topic>Emissions</topic><topic>Energy</topic><topic>Gallium arsenide</topic><topic>Humanities and Social Sciences</topic><topic>Investigations</topic><topic>Low temperature</topic><topic>Materials Testing - methods</topic><topic>Molecular beam epitaxy</topic><topic>multidisciplinary</topic><topic>Optical properties</topic><topic>Science</topic><topic>Spectrum Analysis</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, Xian</creatorcontrib><creatorcontrib>Wei, Zhipeng</creatorcontrib><creatorcontrib>Zhao, Fenghuan</creatorcontrib><creatorcontrib>Yang, Yahui</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><creatorcontrib>Fang, Xuan</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Fang, Dan</creatorcontrib><creatorcontrib>Wang, Dengkui</creatorcontrib><creatorcontrib>Li, Ruixue</creatorcontrib><creatorcontrib>Ge, Xiaotian</creatorcontrib><creatorcontrib>Ma, Xiaohui</creatorcontrib><creatorcontrib>Wang, Xiaohua</creatorcontrib><collection>SpringerOpen (Open Access)</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest - Health &amp; Medical Complete保健、医学与药学数据库</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>ProQuest Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Health &amp; Medical Complete (Alumni)</collection><collection>ProQuest Biological Science Collection</collection><collection>Health &amp; Medical Collection (Alumni Edition)</collection><collection>Medical Database</collection><collection>Science Database</collection><collection>Biological Science Database</collection><collection>Publicly Available Content (ProQuest)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gao, Xian</au><au>Wei, Zhipeng</au><au>Zhao, Fenghuan</au><au>Yang, Yahui</au><au>Chen, Rui</au><au>Fang, Xuan</au><au>Tang, Jilong</au><au>Fang, Dan</au><au>Wang, Dengkui</au><au>Li, Ruixue</au><au>Ge, Xiaotian</au><au>Ma, Xiaohui</au><au>Wang, Xiaohua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-07-06</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>29112</spage><epage>29112</epage><pages>29112-29112</pages><artnum>29112</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>27381641</pmid><doi>10.1038/srep29112</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
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subjects 639/301/1019
639/624/399
639/766/1130
639/766/119/544
Alloys
Alloys - chemistry
Emissions
Energy
Gallium arsenide
Humanities and Social Sciences
Investigations
Low temperature
Materials Testing - methods
Molecular beam epitaxy
multidisciplinary
Optical properties
Science
Spectrum Analysis
Temperature
title Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T04%3A29%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Localized%20States%20in%20GaAsSb%20Epilayers%20Grown%20by%20Molecular%20Beam%20Epitaxy&rft.jtitle=Scientific%20reports&rft.au=Gao,%20Xian&rft.date=2016-07-06&rft.volume=6&rft.issue=1&rft.spage=29112&rft.epage=29112&rft.pages=29112-29112&rft.artnum=29112&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/srep29112&rft_dat=%3Cproquest_pubme%3E1803795591%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c504t-77bbdb3eada76aa35cb18fd834783858fa3ac56fa4a3f3da743bc7e69958b3b63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1811582111&rft_id=info:pmid/27381641&rfr_iscdi=true