Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

Molybdenum disulfide (MoS 2 ) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS 2 -based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and c...

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Bibliographic Details
Published in:Scientific reports 2016-07, Vol.6 (1), p.30084-30084, Article 30084
Main Authors: Shimazu, Yoshihiro, Tashiro, Mitsuki, Sonobe, Satoshi, Takahashi, Masaki
Format: Article
Language:English
Subjects:
639/766/119/1000/1018
639/925/927/1007
Environmental effects
Gases
Humanities and Social Sciences
Humidity
Low temperature
Molybdenum
multidisciplinary
Nitrogen
Relative humidity
Science
Temperature
Transistors
Trapping
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Summary:Molybdenum disulfide (MoS 2 ) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS 2 -based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS 2 field-effect transistors. Comparisons between different gases (oxygen, nitrogen and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep30084