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Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors
Molybdenum disulfide (MoS 2 ) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS 2 -based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and c...
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Published in: | Scientific reports 2016-07, Vol.6 (1), p.30084-30084, Article 30084 |
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description | Molybdenum disulfide (MoS
2
) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS
2
-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS
2
field-effect transistors. Comparisons between different gases (oxygen, nitrogen and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed. |
doi_str_mv | 10.1038/srep30084 |
format | article |
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2
) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS
2
-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS
2
field-effect transistors. Comparisons between different gases (oxygen, nitrogen and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep30084</identifier><identifier>PMID: 27435309</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/766/119/1000/1018 ; 639/925/927/1007 ; Environmental effects ; Gases ; Humanities and Social Sciences ; Humidity ; Low temperature ; Molybdenum ; multidisciplinary ; Nitrogen ; Relative humidity ; Science ; Temperature ; Transistors ; Trapping</subject><ispartof>Scientific reports, 2016-07, Vol.6 (1), p.30084-30084, Article 30084</ispartof><rights>The Author(s) 2016</rights><rights>Copyright Nature Publishing Group Jul 2016</rights><rights>Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c504t-135869d310435bbd37cbae1efd3471830cb0bea7b298722111b350c1a49715513</citedby><cites>FETCH-LOGICAL-c504t-135869d310435bbd37cbae1efd3471830cb0bea7b298722111b350c1a49715513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1817890517/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1817890517?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25752,27923,27924,37011,37012,44589,53790,53792,74897</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27435309$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Shimazu, Yoshihiro</creatorcontrib><creatorcontrib>Tashiro, Mitsuki</creatorcontrib><creatorcontrib>Sonobe, Satoshi</creatorcontrib><creatorcontrib>Takahashi, Masaki</creatorcontrib><title>Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>Molybdenum disulfide (MoS
2
) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS
2
-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS
2
field-effect transistors. Comparisons between different gases (oxygen, nitrogen and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed.</description><subject>639/766/119/1000/1018</subject><subject>639/925/927/1007</subject><subject>Environmental effects</subject><subject>Gases</subject><subject>Humanities and Social Sciences</subject><subject>Humidity</subject><subject>Low temperature</subject><subject>Molybdenum</subject><subject>multidisciplinary</subject><subject>Nitrogen</subject><subject>Relative humidity</subject><subject>Science</subject><subject>Temperature</subject><subject>Transistors</subject><subject>Trapping</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNplkVFrFTEQhYMottQ--Ack4IsKq5lk02RfBLneWqHiS30OSXa2TdlNrslu4f57I1svV81LEs43Z2Y4hLwE9h6Y0B9Kxp1gTLdPyClnrWy44Pzp0fuEnJdyz-qRvGuhe05OuGqFFKw7JbttfAg5xQnjbEe6HQb0c6Ep0qt9mTFjCfU30JtsYxkw082dzdZXJZQ5-EJDpN_SuHc9xmWin0NZxiH0SC8Djn2z-q3VtSDl8oI8G-xY8PzxPiM_Lrc3m6vm-vuXr5tP142XrJ0bEFJfdL0AVid1rhfKO4uAQy9aBVow75hDqxzvtOIcAJyQzINtOwVSgjgjH1ff3eIm7H3dL9vR7HKYbN6bZIP5W4nhztymB9N2EjTT1eDNo0FOPxcss5lC8TiONmJaiqnQBVMaGK_o63_Q-7TkWNerFCjdMQmqUm9XyudUamrDYRhg5neU5hBlZV8dT38g_wRXgXcrUKoUbzEftfzP7RfBgak2</recordid><startdate>20160720</startdate><enddate>20160720</enddate><creator>Shimazu, Yoshihiro</creator><creator>Tashiro, Mitsuki</creator><creator>Sonobe, Satoshi</creator><creator>Takahashi, Masaki</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20160720</creationdate><title>Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors</title><author>Shimazu, Yoshihiro ; Tashiro, Mitsuki ; Sonobe, Satoshi ; Takahashi, Masaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c504t-135869d310435bbd37cbae1efd3471830cb0bea7b298722111b350c1a49715513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>639/766/119/1000/1018</topic><topic>639/925/927/1007</topic><topic>Environmental effects</topic><topic>Gases</topic><topic>Humanities and Social Sciences</topic><topic>Humidity</topic><topic>Low temperature</topic><topic>Molybdenum</topic><topic>multidisciplinary</topic><topic>Nitrogen</topic><topic>Relative humidity</topic><topic>Science</topic><topic>Temperature</topic><topic>Transistors</topic><topic>Trapping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shimazu, Yoshihiro</creatorcontrib><creatorcontrib>Tashiro, Mitsuki</creatorcontrib><creatorcontrib>Sonobe, Satoshi</creatorcontrib><creatorcontrib>Takahashi, Masaki</creatorcontrib><collection>SpringerOpen</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Health & Medical Collection (Proquest)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>ProQuest Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>Biological Sciences</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>PML(ProQuest Medical Library)</collection><collection>Science Database (ProQuest)</collection><collection>Biological Science Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shimazu, Yoshihiro</au><au>Tashiro, Mitsuki</au><au>Sonobe, Satoshi</au><au>Takahashi, Masaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-07-20</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>30084</spage><epage>30084</epage><pages>30084-30084</pages><artnum>30084</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>Molybdenum disulfide (MoS
2
) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS
2
-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS
2
field-effect transistors. Comparisons between different gases (oxygen, nitrogen and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>27435309</pmid><doi>10.1038/srep30084</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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subjects | 639/766/119/1000/1018 639/925/927/1007 Environmental effects Gases Humanities and Social Sciences Humidity Low temperature Molybdenum multidisciplinary Nitrogen Relative humidity Science Temperature Transistors Trapping |
title | Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors |
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