Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

Defect depth profiles of Cu (In 1−x ,Ga x )(Se 1−y S y ) 2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 ...

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Published in:Scientific reports 2016-08, Vol.6 (1), p.30554-30554, Article 30554
Main Authors: Heo, Sung, Chung, JaeGwan, Lee, Hyung-Ik, Lee, Junho, Park, Jong-Bong, Cho, Eunae, Kim, KiHong, Kim, Seong Heon, Park, Gyeong Su, Lee, Dongho, Lee, Jaehan, Nam, Junggyu, Yang, JungYup, Lee, Dongwha, Cho, Hoon Young, Kang, Hee Jae, Choi, Pyung-Ho, Choi, Byoung-Deog
Format: Article
Language:English
Subjects:
639/301/299/946
639/301/930/12
Defects
Humanities and Social Sciences
multidisciplinary
Photoelectron spectroscopy
Science
Spectroscopy
Spectrum analysis
Thin films
Traps
Voltage
X-rays
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Summary:Defect depth profiles of Cu (In 1−x ,Ga x )(Se 1−y S y ) 2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (V OC ) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the V OC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep30554