Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Scientific Reports 6: Article number: 25328; published online: 04 May 2016; updated: 22 September 2016 In the original HTML version of this Article, all instances of the orientation [1–10] and [3–11] were incorrectly written as “1,2,3,4,5,6,7,8,9,10” and “3,4,5,6,7,8,9,10,11” respectively. In the or...

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Bibliographic Details
Published in:Scientific reports 2016-09, Vol.6 (1), p.29875-29875, Article 29875
Main Authors: Renard, Charles, Molière, Timothée, Cherkashin, Nikolay, Alvarez, José, Vincent, Laetitia, Jaffré, Alexandre, Hallais, Géraldine, Connolly, James Patrick, Mencaraglia, Denis, Bouchier, Daniel
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/766/119/544
Erratum
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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Summary:Scientific Reports 6: Article number: 25328; published online: 04 May 2016; updated: 22 September 2016 In the original HTML version of this Article, all instances of the orientation [1–10] and [3–11] were incorrectly written as “1,2,3,4,5,6,7,8,9,10” and “3,4,5,6,7,8,9,10,11” respectively. In the original PDF version of this Article, all instances of the orientation [1–10] and [3–11] were given as “1–10” and “3–11” respectively.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep29875