Ferroelectric symmetry-protected multibit memory cell

The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limi...

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Published in:Scientific reports 2017-02, Vol.7 (1), p.42196-42196, Article 42196
Main Authors: Baudry, Laurent, Lukyanchuk, Igor, Vinokur, Valerii M.
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Language:English
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639/766/119/996
639/766/530/2795
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electric fields
Energy
Humanities and Social Sciences
Information technology
Laboratories
MATERIALS SCIENCE
Memory cells
multidisciplinary
Polarization
Random access memory
Science
Storage capacity
Symmetry
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cited_by cdi_FETCH-LOGICAL-c465t-482559958797b836499c508b322455176336f842b9fcaf7547a0409b1a37e5173
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description The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.
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subjects 639/766/119/996
639/766/530/2795
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electric fields
Energy
Humanities and Social Sciences
Information technology
Laboratories
MATERIALS SCIENCE
Memory cells
multidisciplinary
Polarization
Random access memory
Science
Storage capacity
Symmetry
title Ferroelectric symmetry-protected multibit memory cell
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