Multicolor light-emitting devices with Tb2O3 on silicon

Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb 2 O 3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the ch...

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Bibliographic Details
Published in:Scientific reports 2017-02, Vol.7 (1), p.42479-42479, Article 42479
Main Authors: Li, Ling, Wang, Shenwei, Mu, Guangyao, Yin, Xue, Yi, Lixin
Format: Article
Language:English
Subjects:
639/624/1020/1089
639/624/1075/401
Humanities and Social Sciences
Light
multidisciplinary
Science
Silicon
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Summary:Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb 2 O 3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb 3+ ions in Tb 2 O 3 . The electroluminescence mechanisms of the Tb 2 O 3 light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu 3+ , Sm 3+ and Yb 3+ ) doped Tb 2 O 3 light-emitting devices.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep42479