Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside th...

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Bibliographic Details
Published in:Scientific reports 2017-03, Vol.7 (1), p.42962-42962, Article 42962
Main Authors: Wang, Sheng-Wen, Hong, Kuo-Bin, Tsai, Yu-Lin, Teng, Chu-Hsiang, Tzou, An-Jye, Chu, You-Chen, Lee, Po-Tsung, Ku, Pei-Cheng, Lin, Chien-Chung, Kuo, Hao-Chung
Format: Article
Language:English
Subjects:
639/624/1020/1089
639/624/1111/1114
Humanities and Social Sciences
multidisciplinary
Science
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Summary:In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep42962