Thermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces

Two-dimensional (2D) materials and their corresponding van der Waals heterostructures have drawn tremendous interest due to their extraordinary electrical and optoelectronic properties. Insulating 2D hexagonal boron nitride ( h -BN) with an atomically smooth surface has been widely used as a passiva...

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Bibliographic Details
Published in:Scientific reports 2017-03, Vol.7 (1), p.43886-43886, Article 43886
Main Authors: Liu, Yi, Ong, Zhun-Yong, Wu, Jing, Zhao, Yunshan, Watanabe, Kenji, Taniguchi, Takashi, Chi, Dongzhi, Zhang, Gang, Thong, John T. L., Qiu, Cheng-Wei, Hippalgaonkar, Kedar
Format: Article
Language:English
Subjects:
140/133
639/166/988
639/301/357/1018
639/766/119/544
639/925/930/12
Boron
Computer engineering
Conductance
Conductivity
Graphene
Heat conductivity
Heat flow
Humanities and Social Sciences
Interfaces
multidisciplinary
Raman spectroscopy
Science
Spectroscopy
Spectrum analysis
Temperature effects
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Summary:Two-dimensional (2D) materials and their corresponding van der Waals heterostructures have drawn tremendous interest due to their extraordinary electrical and optoelectronic properties. Insulating 2D hexagonal boron nitride ( h -BN) with an atomically smooth surface has been widely used as a passivation layer to improve carrier transport for other 2D materials, especially for Transition Metal Dichalcogenides (TMDCs). However, heat flow at the interface between TMDCs and h -BN, which will play an important role in thermal management of various electronic and optoelectronic devices, is not yet understood. In this paper, for the first time, the interface thermal conductance (G) at the MoS 2 / h -BN interface is measured by Raman spectroscopy, and the room-temperature value is (17.0 ± 0.4) MW · m −2 K −1 . For comparison, G between graphene and h -BN is also measured, with a value of (52.2 ± 2.1) MW · m −2 K −1 . Non-equilibrium Green’s function (NEGF) calculations, from which the phonon transmission spectrum can be obtained, show that the lower G at the MoS 2 / h -BN interface is due to the weaker cross-plane transmission of phonon modes compared to graphene/ h -BN. T h is study demonstrates that the MoS 2 / h -BN interface limits cross-plane heat dissipation, and thereby could impact the design and applications of 2D devices while considering critical thermal management.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep43886