Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0....

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Bibliographic Details
Published in:Scientific reports 2017-05, Vol.7 (1), p.46670-46670, Article 46670
Main Authors: Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam
Format: Article
Language:English
Subjects:
639/766/119/1000/1018
639/766/119/995
639/766/483/481
Humanities and Social Sciences
multidisciplinary
Science
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Summary:We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep46670