Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0....

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2017-05, Vol.7 (1), p.46670-46670, Article 46670
Main Authors: Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam
Format: Article
Language:English
Subjects:
639/766/119/1000/1018
639/766/119/995
639/766/483/481
Humanities and Social Sciences
multidisciplinary
Science
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3
cites cdi_FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3
container_end_page 46670
container_issue 1
container_start_page 46670
container_title Scientific reports
container_volume 7
creator Shamim, Saquib
Mahapatra, S.
Scappucci, G.
Klesse, W. M.
Simmons, M. Y.
Ghosh, Arindam
description We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.
doi_str_mv 10.1038/srep46670
format article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5415765</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1895276585</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3</originalsourceid><addsrcrecordid>eNptkdFqFDEUhoMottRe-AKSSxWmJpkkk_FCkKpVKFRQr8PZzJltajZZk5ku9bl8Dp-pabcuLZib_Jzz5T-H_IQ85-yIs9a8KRnXUuuOPSL7gknViFaIx_f0Hjks5YLVo0Qvef-U7AkjO8a13iebD7g-h-LjkmaYsNAxZbpB-ElDchD8b5h8ihTiQOfoLzEXCNSlOMxuguiQjqGq-ZYq1Ec6bRId_ApjqZXKfvNvv94-P8Eq_v5pAlxVl2fkyQih4OHdfUB-fPr4_fhzc3p28uX4_WnjWsmmplWuQz0Yx6TRToMZDWfIW0AAMYxsZN3YCS25XCjRoellL2DohFowNpoFtgfk3dZ3PS9WODiMU4Zg19mvIF_ZBN4-7ER_bpfp0irJVadVNXh5Z5DTrxnLZFe-OAwBIqa5WG76Olkrc4O-2qIup1JjGXdjOLM3WdldVpV9cX-vHfkvmQq83gKltuISs71Ic64_Wv7jdg1-dqEr</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1895276585</pqid></control><display><type>article</type><title>Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers</title><source>PubMed Central (Open Access)</source><source>Full-Text Journals in Chemistry (Open access)</source><source>Publicly Available Content (ProQuest)</source><source>Springer Nature - nature.com Journals - Fully Open Access</source><creator>Shamim, Saquib ; Mahapatra, S. ; Scappucci, G. ; Klesse, W. M. ; Simmons, M. Y. ; Ghosh, Arindam</creator><creatorcontrib>Shamim, Saquib ; Mahapatra, S. ; Scappucci, G. ; Klesse, W. M. ; Simmons, M. Y. ; Ghosh, Arindam</creatorcontrib><description>We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep46670</identifier><identifier>PMID: 28470166</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/766/119/1000/1018 ; 639/766/119/995 ; 639/766/483/481 ; Humanities and Social Sciences ; multidisciplinary ; Science</subject><ispartof>Scientific reports, 2017-05, Vol.7 (1), p.46670-46670, Article 46670</ispartof><rights>The Author(s) 2017</rights><rights>Copyright © 2017, The Author(s) 2017 The Author(s)</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3</citedby><cites>FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,27924,27925,37013,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28470166$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Shamim, Saquib</creatorcontrib><creatorcontrib>Mahapatra, S.</creatorcontrib><creatorcontrib>Scappucci, G.</creatorcontrib><creatorcontrib>Klesse, W. M.</creatorcontrib><creatorcontrib>Simmons, M. Y.</creatorcontrib><creatorcontrib>Ghosh, Arindam</creatorcontrib><title>Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.</description><subject>639/766/119/1000/1018</subject><subject>639/766/119/995</subject><subject>639/766/483/481</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Science</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNptkdFqFDEUhoMottRe-AKSSxWmJpkkk_FCkKpVKFRQr8PZzJltajZZk5ku9bl8Dp-pabcuLZib_Jzz5T-H_IQ85-yIs9a8KRnXUuuOPSL7gknViFaIx_f0Hjks5YLVo0Qvef-U7AkjO8a13iebD7g-h-LjkmaYsNAxZbpB-ElDchD8b5h8ihTiQOfoLzEXCNSlOMxuguiQjqGq-ZYq1Ec6bRId_ApjqZXKfvNvv94-P8Eq_v5pAlxVl2fkyQih4OHdfUB-fPr4_fhzc3p28uX4_WnjWsmmplWuQz0Yx6TRToMZDWfIW0AAMYxsZN3YCS25XCjRoellL2DohFowNpoFtgfk3dZ3PS9WODiMU4Zg19mvIF_ZBN4-7ER_bpfp0irJVadVNXh5Z5DTrxnLZFe-OAwBIqa5WG76Olkrc4O-2qIup1JjGXdjOLM3WdldVpV9cX-vHfkvmQq83gKltuISs71Ic64_Wv7jdg1-dqEr</recordid><startdate>20170504</startdate><enddate>20170504</enddate><creator>Shamim, Saquib</creator><creator>Mahapatra, S.</creator><creator>Scappucci, G.</creator><creator>Klesse, W. M.</creator><creator>Simmons, M. Y.</creator><creator>Ghosh, Arindam</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20170504</creationdate><title>Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers</title><author>Shamim, Saquib ; Mahapatra, S. ; Scappucci, G. ; Klesse, W. M. ; Simmons, M. Y. ; Ghosh, Arindam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>639/766/119/1000/1018</topic><topic>639/766/119/995</topic><topic>639/766/483/481</topic><topic>Humanities and Social Sciences</topic><topic>multidisciplinary</topic><topic>Science</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shamim, Saquib</creatorcontrib><creatorcontrib>Mahapatra, S.</creatorcontrib><creatorcontrib>Scappucci, G.</creatorcontrib><creatorcontrib>Klesse, W. M.</creatorcontrib><creatorcontrib>Simmons, M. Y.</creatorcontrib><creatorcontrib>Ghosh, Arindam</creatorcontrib><collection>SpringerOpen</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shamim, Saquib</au><au>Mahapatra, S.</au><au>Scappucci, G.</au><au>Klesse, W. M.</au><au>Simmons, M. Y.</au><au>Ghosh, Arindam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2017-05-04</date><risdate>2017</risdate><volume>7</volume><issue>1</issue><spage>46670</spage><epage>46670</epage><pages>46670-46670</pages><artnum>46670</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ -layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10 18 m −2 ) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>28470166</pmid><doi>10.1038/srep46670</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2045-2322
ispartof Scientific reports, 2017-05, Vol.7 (1), p.46670-46670, Article 46670
issn 2045-2322
2045-2322
language eng
recordid cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5415765
source PubMed Central (Open Access); Full-Text Journals in Chemistry (Open access); Publicly Available Content (ProQuest); Springer Nature - nature.com Journals - Fully Open Access
subjects 639/766/119/1000/1018
639/766/119/995
639/766/483/481
Humanities and Social Sciences
multidisciplinary
Science
title Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T19%3A27%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dephasing%20rates%20for%20weak%20localization%20and%20universal%20conductance%20fluctuations%20in%20two%20dimensional%20Si:P%20and%20Ge:P%20%CE%B4-layers&rft.jtitle=Scientific%20reports&rft.au=Shamim,%20Saquib&rft.date=2017-05-04&rft.volume=7&rft.issue=1&rft.spage=46670&rft.epage=46670&rft.pages=46670-46670&rft.artnum=46670&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/srep46670&rft_dat=%3Cproquest_pubme%3E1895276585%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c340t-35c7e6d8c0486c6a8f810e13aeaa2df0f07f726414b527e89492ad725b00f8be3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1895276585&rft_id=info:pmid/28470166&rfr_iscdi=true