The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degree C for 1 s. All annealed samples show...

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Bibliographic Details
Published in:Materials 2014-02, Vol.7 (2), p.1409-1421
Main Authors: Abidin, Mastura Shafinaz Zainal, Morshed, Tahsin, Chikita, Hironori, Kinoshita, Yuki, Muta, Shunpei, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Matsumura, Ryo, Mahmood, Mohamad Rusop, Sadoh, Taizoh
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Composition effects
Crystallization
Electrical engineering
Electronic mail systems
Germanium
Integrated circuits
Melting
Molecular beam epitaxy
Silicon
Silicon substrates
Strain
Temperature
Transistors
Vibration mode
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Summary:The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degree C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm-1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1-x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma7021409