Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates

Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed...

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Bibliographic Details
Published in:Materials 2014-01, Vol.7 (1), p.365-374
Main Authors: Samudrala, Gopi K, Vohra, Yogesh K, Walock, Michael J, Miles, Robin
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Chemistry
Density
Diamond films
Diamonds
Experiments
film growth
Fusion
Lasers
MATERIALS SCIENCE
Morphology
MPCVD
NANOSCIENCE AND NANOTECHNOLOGY
Nanostructure
nanostructured diamond
Scanning electron microscopy
Silicon
Silicon substrates
Temperature
thin film structure and morphology
Titanium alloys
Titanium base alloys
X-rays
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Summary:Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma7010365