Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si Ge /Si) through microwave annealing (MWA) rang...

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Bibliographic Details
Published in:Materials 2015-11, Vol.8 (11), p.7519-7523
Main Authors: Lin, Yu-Hsien, Tsai, Yi-He, Hsu, Chung-Chun, Luo, Guang-Li, Lee, Yao-Jen, Chien, Chao-Hsin
Format: Article
Language:English
Subjects:
Annealing
Electrical resistivity
Leakage current
Microwaves
Multilayers
Silicon germanides
Silicon substrates
Silicon wafers
Temperature
X-ray diffraction
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Summary:In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si Ge /Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (I /I ) ratio of ~3 × 10⁵. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma8115403