The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 60...

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Bibliographic Details
Published in:Scientific reports 2017-09, Vol.7 (1), p.10885-10, Article 10885
Main Authors: Shin, Yeonwoo, Kim, Sang Tae, Kim, Kuntae, Kim, Mi Young, Oh, Saeroonter, Jeong, Jae Kyeong
Format: Article
Language:English
Subjects:
639/166/987
639/301/1005/1007
Annealing
Crystallization
Gallium
Humanities and Social Sciences
Indium
Irradiation
Low temperature
Mobility
multidisciplinary
Science
Science (multidisciplinary)
Tantalum
Temperature effects
Thin films
Transistors
Zinc oxide
Zinc oxides
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Summary:High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 °C or higher, which is not suitable for displays using a glass substrate. The crystallization temperature is reduced when in contact with a Ta layer, where partial crystallization at the IGZO back-channel occurs with annealing at 300 °C, while complete crystallization of the active layer occurs at 400 °C. The field-effect mobility is significantly boosted to 54.0 cm 2 /V·s for the IGZO device with a metal-induced polycrystalline channel formed at 300 °C compared to 18.1 cm 2 /V·s for an amorphous IGZO TFT without a catalytic layer. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-017-11461-0