Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO3/SrTiO3 Interfaces

We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the...

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Bibliographic Details
Published in:Scientific reports 2018-01, Vol.8 (1), p.1-195, Article 195
Main Authors: Li, Cheng-Jian, Xue, Hong-Xia, Qu, Guo-Liang, Shen, Sheng-Chun, Hong, Yan-Peng, Wang, Xin-Xin, Liu, Ming-rui, Jiang, Wei-min, Badica, Petre, He, Lin, Dou, Rui-Fen, Xiong, Chang-Min, Lü, Wei-ming, Nie, Jia-Cai
Format: Article
Language:English
Subjects:
140/146
639/766/119/544
639/766/119/995
Humanities and Social Sciences
Interfaces
multidisciplinary
Physics
Science
Science (multidisciplinary)
Spectrum analysis
Trapping
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Summary:We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO 3 /SrTiO 3 interface and the influence of substitution layers on 2DEG.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-017-18583-5